High Degree Reduction of Graphene Oxide toward a High Carrier Mobility

Effect of High-K Oxide Layer on Carrier Mobility

ABSTRACT: Over the past three decades CMOS has emerged as the basis of design in nanotechnology. MOSFETS provide an easier way of fabrication due to their ease of manufacturing and lower power consumption than the BJTs. However the use of high k materials to follow Moore’s Law, has created certain problems in the working of these devices. In this review we have dealt with the mobility related i...

Carbon black-intercalated reduced graphene oxide electrode with graphene oxide separator for high-performance supercapacitor

We present a general study on a high performance supercapacitor based on intercalated reduced graphene oxide with carbon black nanoparticles. Graphene oxide sheets were synthesized by oxidation and exfoliation of natural graphite and were reduced using hydroiodic acid in the presence of carbon black nanoparticles. Graphene paper was fabricated by one-step procedure via simultaneous reducing and...

Hybridizing wood cellulose and graphene oxide toward high-performance fibers

High-performance microfibers such as carbon fibers are widely used in aircraft and wind turbine blades. Well-aligned, strong microfibers prepared by hybridizing two-dimensional (2D) graphene oxide (GO) nanosheets and one-dimensional (1D) nanofibrillated cellulose (NFC) fibers are designed here for the first time and have the potential to supersede carbon fibers due to their low cost. These well...

Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency ope...

Effect of a High-w Environment on Charge Carrier Mobility in Graphene